Tower 7 Radimpex Torrent
Tower 7 Radimpex Torrent
Tower 7 Radimpex Torrent
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tower 7 radimpex crack. Download Free Torrent. Tower 7 Radimpex has the license to do so, but.The present invention relates to a method and an apparatus for forming a film by a flow-through process, and more particularly, to a method and an apparatus for forming a film to be used as a protective film for a semiconductor device, a reflective mirror, and the like, as well as a protective film for a semiconductor wafer on which a semiconductor device is to be formed.
In the process of manufacturing a semiconductor device, a number of semiconductor wafers are subjected to various film-forming processes in accordance with their use such as circuits or devices, or various etching processes such as etching or other processes, and the wafers are then subjected to a dicing process to be separated into chips.
In the film-forming process, a plasma process may be utilized because it can form a film at a high speed and uniformity.
On the other hand, in the etching process, an etching process with good selectivity to films to be etched is important because it can increase an aspect ratio of a hole, a groove, or the like to be formed. It is to be noted that the aspect ratio is a ratio of a depth to an opening width of the hole, the groove, or the like.
However, the etching process and the film-forming process need to be performed under different conditions. Thus, conventionally, two separate plasma etching apparatuses (e.g. refer to Japanese Unexamined Patent Publication No. 2003-337976 (Tokukai 2003-337976; published on Nov. 26, 2003)) have been prepared for these processes, respectively.
However, in case of the two separate plasma etching apparatuses, the cost is high, and the manufacturing line becomes large. Further, the area of the manufacturing floor becomes large.
Thus, in order to cope with these problems, it may be possible to integrate the etching process and the film-forming process into one apparatus. However, in that case, the etching process and the film-forming process can be performed only by allowing the wafers to pass in one direction. Thus, this method is not applicable to a system in which the number of wafers subjected to the film-forming
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